Product Overview: High-Power GaN Module for Drone Countermeasures

In the rapidly evolving field of electronic warfare and UAV (Unmanned Aerial Vehicle) countermeasures, power density and reliability are non-negotiable. Our 2000-2400MHz 100W GaN Module is engineered to meet the rigorous demands of modern defense and security systems. Designed specifically for jamming and shielding applications, this module leverages cutting-edge Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology to deliver robust, wideband performance in a compact form factor.

Whether you are integrating into a fixed installation or a mobile tactical unit, this drone jammer module provides the instantaneous bandwidth and output power necessary to neutralize the 2.4 GHz communication band threats effectively.

Key Features at a Glance

• High-Efficiency Architecture: Utilizes a Class AB GaN design, ensuring optimal balance between linearity and power efficiency .

• Instantaneous Wide Bandwidth: Covers the critical 2000-2400MHz spectrum without tuning, ideal for sweeping and spot jamming.

• Advanced Thermal Management: Patented thermal technology with a copper-based carrier ensures stable operation under high-load conditions .

• Rugged & Compact: Machined for high reliability in harsh environments, featuring a low-profile footprint of just 150 x 80 x 22mm .

• Built-In Signal Source: Comes standard with a high-speed noise modulation source, with options for VCO, DDS, or SDR customization .

Technical Specifications

Below are the detailed electrical and physical characteristics of the 100W GaN drone jammer module. The engineering focuses on maintaining a 50-ohm impedance match across the entire band for maximum power transfer.

The Advantage of GaN-on-SiC Technology

This module utilizes Gallium Nitride on Silicon Carbide (GaN-on-SiC) substrates . This specific material combination provides significant advantages over traditional LDMOS or GaAs technologies:

1. High Power Density: GaN allows for higher voltages and current, enabling the 100W output in a package that is significantly smaller and lighter than legacy counterparts .

2. Superior Thermal Conductivity: SiC substrates efficiently pull heat away from the active regions, ensuring the device maintains performance and longevity even during continuous wave (CW) operation .

3. Durability: The GaN-on-SiC structure is inherently rugged, offering high tolerance to impedance mismatches often encountered in field-deployed jamming systems .

Customization Options

We understand that off-the-shelf solutions do not always fit unique operational requirements. This module is built on a flexible platform to support OEM and integration customizations :

• Signal Source: Upgrade from the internal noise source to a Phase-Locked Loop (PLL), Direct Digital Synthesizer (DDS), or Software-Defined Radio (SDR) front-end for specific waveform generation.

• Scan Speed: Tailor the analog sweep rate between 100 and 500 KHz to target specific communication protocols.

• Frequency Bands: While this model covers 2000-2400MHz, we support customization across other defense and ISM bands.

Applications

This high-power amplifier module is the core component for various defense and civilian applications:

• Counter-Unmanned Aerial Systems (C-UAS): Disrupting FPV and commercial drone control links .

• Electronic Warfare (EW): Jamming hostile communications and radar systems .

• IED Jammers: Used in vehicle-mounted or man-pack systems for force protection .

• Test & Measurement: High-power signal generation for component testing.

Ordering Information

Ready to integrate this 100W GaN drone jammer module into your next project? Contact our engineering team to discuss your specific requirements, including quantity pricing and lead times. Custom frequency variants and OEM labeling are available upon request.