Product Overview

The 840-1000MHz 100W GaN Jammer Module is a high-performance RF power amplifier designed specifically for UAV (Unmanned Aerial Vehicle) defense and signal interference. Built on advanced Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology, this module delivers exceptional power density and thermal efficiency in a compact form factor.

Engineered with a Class AB linear design, it offers instantaneous broadband performance and high reliability for mission-critical electronic warfare and security applications.

Key Features

• Advanced GaN-on-SiC Technology: Mounted on a copper base carrier with patented thermal management for superior heat dissipation.

• High Power Output: Consistent 100W (50±1dBm) output across the entire 840-1000MHz spectrum.

• Integrated Signal Source: Built-in high-speed noise modulation (270KHz scan speed) for immediate deployment.

• Rugged Design: Compact, lightweight, and engineered to withstand harsh environments (-20°C to +65°C).

• Highly Customizable: Supports bespoke configurations for VCO, DDS, or SDR input sources.

Technical Specifications

Physical Properties & Customization

Dimensions & Weight

• Size: 150 * 80 * 22 mm

• Weight: 800g

• Housing: High-conductivity copper base for optimized thermal pathing.

Customization Options

We provide flexible OEM/ODM services to meet specific project requirements:

1. Frequency Adjustment: Tuning within the sub-GHz range.

2. Signal Logic: Integration with Software Defined Radio (SDR) or Direct Digital Synthesis (DDS).

3. Cooling Solutions: Custom heat sink attachments or fan-cooled chassis integration.

Applications

• UAV/Drone Countermeasures: Neutralizing unauthorized drones in restricted airspace.

• Signal Blocking: Protecting sensitive areas from remote-controlled threats.

• Electronic Warfare: Integration into mobile or stationary jamming stations.

• Security Infrastructure: Prison security, government buildings, and airport protection.

Note: Proper heat sinking is required during operation to ensure the longevity of the GaN transistors. Ensure the module is mounted to a thermal conductive surface before powering on.