Home > Product > Drone Jammer Module > 50W > 50W GaN Drone Jammer Module | 6500-6700MHz C-Band RF Blocker | High-Power Counter-UAS Amplifier
Product Overview Introducing our state-of-the-art 50W Gallium Nitride (GaN) Drone Jammer Module, precisely engineered for the 6500-6700MHz C-Band frequency range. This module is designed to meet the……
Introducing our state-of-the-art 50W Gallium Nitride (GaN) Drone Jammer Module, precisely engineered for the 6500-6700MHz C-Band frequency range. This module is designed to meet the rigorous demands of modern Counter-Unmanned Aerial Systems (C-UAS) and electronic warfare applications where high frequency and reliability are paramount.
Leveraging advanced GaN-on-SiC technology mounted on a copper-based heat sink, this AB Class linear amplifier delivers an exceptional combination of power density and thermal efficiency. The result is a compact, lightweight, yet incredibly robust module capable of delivering a full 50W of instantaneous wideband power.
High-Efficiency GaN Technology: Utilizes Gallium Nitride on Silicon Carbide (GaN-on-SiC) for superior power density and ruggedness.
Powerful Output: Delivers 47±1dBm (50W) of stable RF power across the entire 6500-6700MHz band.
Wide Instantaneous Bandwidth: Class AB design ensures consistent performance across the full 200MHz span without tuning.
Integrated Modulation Source: Comes with a built-in high-speed noise modulation signal source (270KHz sweep) for immediate deployment.
Robust Protection & Monitoring: Features LED indicators for Power, Over-voltage, and Over-temperature protection.
Ultra-Compact Form Factor: Extremely portable design measuring as small as 117*58*18mm and weighing only 300g, ideal for space-constrained payloads.
Customizable Input: Flexible architecture allows for integration of external VCO, DDS, or SDR signal sources.
The following table outlines the detailed electrical and physical characteristics of the 50W GaN Blocker Module.
| Parameter | Specification | Notes |
|---|---|---|
| Technology | Class AB GaN-on-SiC | Mounted on Copper Base |
| Frequency Range | 6500-6700 MHz | C-Band (200MHz Instantaneous BW) |
| Output Power | 47 ±1 dBm | 50 Watts (Typical) |
| Operating Voltage | 28V | Range: 24-28V DC |
| Operating Current | ≤ 3.2 – 4.5A | @ 50W Output Power |
| Input/Output Impedance | 50 Ohms | Matched for easy integration |
| Modulation Source | Built-in High-Speed Noise | Internal Source (Standard) |
| Analog Sweep Speed | 270 KHz | Customizable: 100 – 500 KHz |
| Input Signal Options | Internal Noise (Standard) | Customizable: VCO, DDS, SDR |
| Connector Type | SMA Female | Standard RF Input/Output Interface |
| Indicators | Power, Over-voltage, Over-temp | Real-time Status Monitoring |
| Operating Temperature | -20 ~ +65 °C | Normal Operating Conditions |
| Dimensions (LWH) | 117 x 58 x 18 mm (or Custom) | Compact Form Factor |
| Weight | 300g | Ultra-Lightweight Design |
This high-power 50W drone jammer module is the ideal core component for the following advanced systems:
Counter-UAV (C-UAS) Defense: Specifically targets C-Band communication and video downlinks used by high-end commercial and tactical drones.
Tactical Electronic Warfare: Suitable for portable soldier systems, UAV-mounted jamming payloads, and vehicle-based countermeasures where size and weight are critical.
Point-to-Point Link Denial: Disrupts fixed microwave links operating within the 6.5-6.7GHz spectrum.
High-Power Test Systems: Serves as a driver or final stage in high-frequency RF test benches.
We understand that specific missions require specific solutions. This GaN module is built for adaptability:
Signal Source: Beyond the standard internal noise source, we can integrate custom VCO, DDS, or SDR front-ends.
Sweep Parameters: The sweep speed and pattern can be tailored to your operational requirements (100-500KHz).
Mechanical Design: The standard size is 117*58*18mm, but we offer custom mechanical modifications for large-volume integration projects.
Contact our engineering team today to discuss your specific C-UAS requirements or to request a prototype.
Superior Technology: GaN-on-SiC provides higher efficiency and better thermal management than traditional LDMOS at C-Band frequencies.
Mission-Ready Design: The built-in high-speed noise source means you have a functional jammer core right out of the box, reducing development time.
Extreme Durability: Designed to withstand harsh environmental conditions (-20~+65°C) while maintaining peak performance, thanks to the advanced copper-base thermal management.
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Send Inquiry
86-13920737097
AddNo. 15, Rongyuan Road, Huayuan Industrial Park, Binhai Hi-tech Zone, Tianjin, China.
E-mailjackyjingtj@gmail.com
Copyright @ 2026 BNT PTE. LTD. No:84463
Copyright @ 2026 BNT PTE. LTD.
Copyright @ 2026BNT PTE. LTD.